1 publication order number : MCH3484/d www.onsemi.com ? semiconductor component s industries, llc, 2015 january 2015 - rev. 2 ordering information see detailed ordering and shipping info rmation on page 5 of this data sheet. MCH3484 features ? on-resistance r ds (on)1=33m ? (typ) ? ? 0.9v drive ? pb-free, halogen free and rohs compliance ? esd diode - protected gate specifications absolute maximum ratings at ta = 25 ? c parameter symbol value unit drain to source voltage v dss 20 v gate to source voltage v gss ? 5 v drain current (dc) i d 4.5 a drain current (pulse) pw ? 10 ? s, duty cycle ? 1% i dp 18 a power dissipation when mounted on ceramic substrate (900mm 2 ? 0.8mm) p d 1.0 w junction temperature tj 150 ? c operating temperature topr ? 5 to +150 ? c storage temperature tstg ? 55 to +150 ? c thermal resistance ratings parameter symbol value unit junction to ambient when mounted on ceramic substrate (900mm 2 ? 0.8mm) r ? ja 125 ? c/w power mosfet 20v, 40m ? , 4.5a, single n-channel stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. electrical connection n-channel packin g t yp e : tl markin g tl 1 2 3 1 : gate 2 : source 3 : drain fr lot no. lot no.
MCH3484 www.onsemi.com 2 electrical characteristics at ta ? 25 ? c parameter symbol conditions value unit min typ max drain to source breakdown voltage v( br ) dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 ? a gate to source leakage current i gss v gs =4v, v ds =0v ? 10 ? a gate threshold voltage v gs (th) v ds =10v, i d =1ma 0.3 0.8 v forward transconductance g fs v ds =10v, i d =2a 5.6 s static drain to source on-state resistance r ds (on)1 i d =2a, v gs =2.5v 33 40 m ? r ds (on)2 i d =1a, v gs =1.8v 37 49 m ? r ds (on)3 i d =0.5a, v gs =1.2v 79 119 m ? r ds (on)4 i d =0.1a, v gs =0.9v 165 330 m ? input capacitance ciss v ds =10v, f=1mhz 630 pf output capacitance coss 75 pf reverse transfer capacitance crss 65 pf turn-on delay time t d (on) see specified test circuit 8.9 ns rise time t r 49 ns turn-off delay time t d (off) 63 ns fall time t f 57 ns total gate charge qg v ds =10v, v gs =2.5v, i d =4.5a 11 nc gate to source charge qgs 0.9 nc gate to drain ?miller? charge qgd 1.8 nc forward diode voltage v sd i s =4.5a, v gs =0v 0.8 1.2 v switching time test circuit product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions. pw=10 ? s d.c. 1% p. g 50 ? g s d i d =2a r l =5 ? v dd =10v v out MCH3484 v in 2.5v 0v v in
MCH3484 www.onsemi.com 3 i d -- v gs drain current, i d -- a gate to source voltage, v gs -- v drain to source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 0.5 3.5 4.0 3.0 1.5 2.5 2.0 1.0 0 0.2 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 1.2v 1.4v 4.5v v gs =0.8v 2.5v 0.9v 1.0v 1 0 6 5 4 3 2 0 1.2 0.6 1.8 1.0 0.4 1.6 0.8 0.2 1.4 2.0 ta=75 c v ds =10v 25 c gate to source voltage, v gs -- v static drain to source on-state resistance, r ds (on) -- m static drain to source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs i s -- v sd source current, i s -- a forward diode voltage, v sd -- v drain current, i d -- a gfs -- i d forward transconductance, gfs -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a drain current, i d -- a static drain to source on-state resistance, r ds (on) -- m r ds (on) -- i d 0.01 0.1 1.0 10 0.1 1.0 10 23 57 23 7 5 v dd =10v v gs =2.5v t d (on) t d (off) t f 10 100 1.0 3 7 5 2 2 3 7 5 t r 357 2357 2357 2 150 100 50 300 200 250 350 450 400 500 0 v gs =0.9v 1.8v 1.2v 2.5v 0 0.2 0.4 0.6 0.8 1.0 1.6 1.4 1.2 0.1 1.0 10 7 5 3 2 2 7 5 3 0.1 1.0 23 57 10 7 0.01 23 57 23 5 ta=25 c v ds =10v 0.01 2 v gs =0v ta=75 c 25 c 75 c 3 0.1 7 5 2 3 7 5 1.0 10 2 3 7 5 0 1.0 2.0 3.0 5.0 4.0 4.5 0.5 1.5 2.5 3.5 150 100 50 300 200 250 350 450 400 500 0 50 100 250 200 150 0 ta=25 c 1.0a --25 0 25 50 75 100 125 150 175 v gs =0.9v, i d =0.1a v gs =2.5v, i d =2.0a 2.0a v gs =1.8v, i d =1.0a v gs =1.2v, i d = 0.5a i d =0.1a 0.5a
MCH3484 www.onsemi.com 4 ciss, coss, crss -- v ds ciss, coss, crss -- pf drain to source voltage, v ds -- v total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v 0246 10000 7 5 3 7 5 3 2 100 10 2 7 5 3 1000 2 820 10 12 14 16 18 ciss coss crss f=1mhz 011 10 2 17 589 36 4 0 0.5 1.0 1.5 2.0 2.5 v ds =10v i d =4.5a ambient temperature, ta -- c p d -- ta power dissipation, p d -- w s o a drain to source voltage, v ds -- v drain current, i d -- a 0 0 20 40 60 80 100 140 120 1.2 1.0 0.6 0.4 0.8 0.2 160 2 3 3 2 5 7 2 0.1 3 5 7 2 1.0 0.01 23 5 3 2 7 23 57 23 57 0.01 0.1 1.0 10 57 100 100 s 10 s 10ms 100ms operation in this area is limited by r ds (on). i d =4.5a dc operation ( ta=25 c ) i dp =18a (pw 10 s) 1ms 5 3 7 5 7 10 100 ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) when mounted on ceramic substrate (900mm 2 0.8mm) thermal resistance, r ja -- oc/w 0.1 10 100 pulse time, pt -- s 0.000001 0.00001 2 0.0001 357 2 0.001 357 2 3 57 0.01 2 0.1 357 r ja -- pulse time 23 57 1.0 2 10 357 23 57 0.1 0.05 0.02 0.01 single pulse duty cycle=0.5 1.0 1000 0.2 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 when mounted on ceramic substrate (900mm 2 0.8mm)
MCH3484 www.onsemi.com 5 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner. 0.65 0.65 0.4 2.1 0.6 package dimensions MCH3484-tl-h / MCH3484-tl-w mcph3 case 419aq issue o unit : mm 1 : gate 2 : source 3 : drain recommended soldering footprint ordering information device package shipping note MCH3484-tl-h mcph3 sc-70,sot-323 3,000 pcs. / reel pb-free and halogen free MCH3484-tl-w note on usage : since the MCH3484 is a mosfet product, pl ease avoid using this device in the vicinity of highly charged objects.
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